等离子体离子源以及带电粒子束装置

Plasma ion source and charged particle beam apparatus

Abstract

The invention relates to a plasma ion source and a charged particle beam apparatus which is to ensure expected cooling performance and increase the overall size of the plasma ion source. The plasma ion source of the embodiment includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.
本发明涉及等离子体离子源以及带电粒子束装置。防止为了确保期望的冷却性而使等离子体离子源整体的大小増大。实施方式的等离子体离子源具备气体导入室、等离子体生成室、线圈、外壳和绝缘性液体。气体导入室导入原料气体。由电介质材料形成的等离子体生成室连接于气体导入室。线圈沿着等离子体生成室的外周卷绕,并且,被施加高频功率。外壳包围气体导入室、等离子体生成室和线圈。绝缘性液体被填充在气体导入室和等离子体生成室与外壳之间来浸渍线圈。绝缘性液体具有与外壳的绝缘耐压相比相对大的绝缘耐压和与等离子体生成室相同程度的介质损耗角正切。

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